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Manufacturer Part #

IRFH5301TRPBF

Single N-Channel 30 V 1.85 mOhm 77 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

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Mfr. Name: Infineon Technologies
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Product Specification Section
Infineon Technologies IRFH5301TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 1.85mΩ
Rated Power Dissipation: 3.6W
Qg Gate Charge: 77nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 35A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 22ns
Rise Time: 78ns
Fall Time: 23ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Input Capacitance: 5114pF
Package Style:  PQFN 5 x 6 mm
Mounting Method: Surface Mount
Features & Applications

International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5301TRPbF that delivers the industry’s lowest on-state resistance (RDS(on)).

The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5301TRPbF is a 30V device delivers industry leading RDS(on) of only 1.85mOhm (max.) at 10V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools. 

The 30V IRFH5301TRPbF is designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5301TRPbF features ultra low RDS(on) of 1.85 mOhm (max.) combined with just 37 nC gate charge (Qg)

In addition to achieving excellent thermal performance, as a result of using the IRFH5301TRPbF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.

The IRFH5301TRPBF is a 30v,100A,1.85mohms, PQFN package mosfet.

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Minimum Order:
4000
Multiple Of:
4000
Total
$4,960.00
USD
Quantity
Unit Price
4,000+
$1.24
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