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Infineon Technologies | IRLB3036PBF

Manufacturer Part #

IRLB3036PBF

Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IRLB3036PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2.4mΩ
Rated Power Dissipation: 380|W
Qg Gate Charge: 91nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The IRLB3036PBF is a HEXFET power MOSFET with voltage of 60 V. Available in a TO-220AB package.

Features & Benefits:

  • Optimized for Logic Level Drive
  • Very Low RDS(ON) at 4.5V VGS
  • Superior R*Q at 4.5V VGS
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free

Applications:

  • DC Motor Drive
  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$2,970.00
USD
Quantity
Unit Price
10
$3.09
40
$3.05
125
$3.01
400
$2.97
1,250+
$2.89
Product Variant Information section