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Infineon Technologies | IRLB4030PBF

Manufacturer Part #

IRLB4030PBF

Single N-Channel 100 V 4.5 mOhm 87 nC 3HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2343
Product Specification Section
Infineon Technologies IRLB4030PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 370W
Qg Gate Charge: 87nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 180A
Turn-on Delay Time: 74ns
Turn-off Delay Time: 110ns
Rise Time: 330ns
Fall Time: 170ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 11360pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
13
USA:
13
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
13
Multiple Of:
1
Total
$19.24
USD
Quantity
Unit Price
15
$1.48
50
$1.46
200
$1.44
500
$1.43
2,000+
$1.39
Product Variant Information section