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onsemi | NTMS5P02R2G

Manufacturer Part #

NTMS5P02R2G

P-Channel 20 V 26 mOhm 2.5 W Surface Mount Power MOSFET - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi NTMS5P02R2G - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 26mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 35nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The NTMS5P02R2G is a part of NTMS5P02R2 series P−channel power MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOIC-8 package.

Features:

  • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency
  • Miniature SOIC−8 Surface Mount Package − Saves Board Space
  • Diode Exhibits High Speed with Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Drain−to−Source Avalanche Energy Specified
  • Mounting Information for the SOIC−8 Package is Provided
  • Pb−Free Package is Available

Applications:

  • Power Management in Portable and Battery−Powered Products
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
38 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,275.00
USD
Quantity
Unit Price
2,500
$0.91
5,000
$0.90
7,500+
$0.885
Product Variant Information section