text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. PMZB290UNE2YL

Nexperia | PMZB290UNE2YL

Manufacturer Part #

PMZB290UNE2YL

PMZB290UNE2YL Series 20 V 1.2 A 320 mOhm N-Channel TrenchMOS FET - DFN1006B-3

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia PMZB290UNE2YL - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 320mΩ
Rated Power Dissipation: 350mW
Qg Gate Charge: 0.8nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 1.2A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 11ns
Rise Time: 10ns
Fall Time: 4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.7V
Input Capacitance: 46pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
30000
Multiple Of:
10000
Total
$6,900.00
USD
Quantity
Unit Price
10,000
$0.235
30,000+
$0.23
Product Variant Information section