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Vishay | SIDR390DP-T1-GE3

Manufacturer Part #

SIDR390DP-T1-GE3

Single N-Channel 30 V 0.80 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8DC

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIDR390DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.8mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 102nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 69.9A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 46ns
Rise Time: 16ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 10180pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$32,820.00
USD
Quantity
Unit Price
3,000+
$5.47
Product Variant Information section