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Vishay | SIHFRC20TR-GE3

Manufacturer Part #

SIHFRC20TR-GE3

SIHFRC20 Series 600 V 2 A 4.4 Ohm Single N-Channel Power MOSFET - TO-252

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHFRC20TR-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 4.4Ω
Rated Power Dissipation: 42W
Qg Gate Charge: 18nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 30ns
Rise Time: 23ns
Fall Time: 25s
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 350pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Total
$2,440.00
USD
Quantity
Unit Price
2,000
$1.22
4,000
$1.21
6,000+
$1.20
Product Variant Information section