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Vishay | SIS435DNT-T1-GE3

Manufacturer Part #

SIS435DNT-T1-GE3

Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2422
Product Specification Section
Vishay SIS435DNT-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -20V
Drain-Source On Resistance-Max: 0.014Ω
Rated Power Dissipation: 3.7W
Qg Gate Charge: 86nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: -22A
Turn-on Delay Time: 80ns
Turn-off Delay Time: 200ns
Rise Time: 60ns
Fall Time: 60ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -0.9V
Technology: Si
Height - Max: 0.8mm
Length: 3.4mm
Input Capacitance: 5700pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
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Total
$3,660.00
USD
Quantity
Unit Price
3,000
$1.22
6,000+
$1.20
Product Variant Information section