text.skipToContent text.skipToNavigation

Manufacturer Part #

SIS476DN-T1-GE3

MOSFET N-CH 30V 40A 1212-8 PWR

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2532
Product Specification Section
Vishay SIS476DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.0035Ω
Rated Power Dissipation: 3.7W
Qg Gate Charge: 77nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 28.6A
Turn-on Delay Time: 24ns
Turn-off Delay Time: 30ns
Rise Time: 34ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.3V
Technology: Si
Height - Max: 1.12mm
Length: 3.4mm
Input Capacitance: 3595pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Features & Applications

The SIS476DN-T1-GE3 is a part of SIS476DN series N-Channel MosFet. It has an operating temperature ranging from -55°C to +150°C.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Gen IV Power MOSFET
  • 100 % Rg and UIS Tested
  • Compliant to RoHS Directive 2002/95/EC

Applications:

  • Switch Mode Power Supplies
  • Personal Computers and Servers
  • Telecom Bricks
  • VRM’s and POL
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,500.00
USD
Quantity
Unit Price
3,000
$0.50
6,000
$0.495
9,000
$0.49
15,000+
$0.48
Product Variant Information section