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Vishay | SIS888DN-T1-GE3

Manufacturer Part #

SIS888DN-T1-GE3

N-Channel 150 V 58 mOhm 52 W ThunderFET Power Mosfet - PowerPAK 1212-8S

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
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Product Specification Section
Vishay SIS888DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 58mΩ
Rated Power Dissipation: 3.7W
Qg Gate Charge: 9.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.3A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 13ns
Rise Time: 8ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.2V
Input Capacitance: 420pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
6000
Multiple Of:
3000
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Total
$15,060.00
USD
Quantity
Unit Price
3,000+
$2.51
Product Variant Information section