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Vishay | SQ4282EY-T1_GE3

Manufacturer Part #

SQ4282EY-T1_GE3

Dual N-Channel 30 V 12.3 mOhm 3.9 W SMT Automotive Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SQ4282EY-T1_GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 12.3mΩ
Rated Power Dissipation: 3.9W
Qg Gate Charge: 31.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 34ns
Rise Time: 11ns
Fall Time: 8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 1893pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Total
$6,300.00
USD
Quantity
Unit Price
2,500+
$2.52
Product Variant Information section