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STMicroelectronics | STB4NK60ZT4

Manufacturer Part #

STB4NK60ZT4

N-Channel 600 V 2 Ohm Surface Mount SuperMESH Power MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STB4NK60ZT4 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 2Ω
Rated Power Dissipation: 70|W
Qg Gate Charge: 26nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications
The STB4NK60ZT4 is a N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in D²PAK.

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features:

  • Very low intrinsic capacitances
  • 100% avalanche tested

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
1000
Total
$3,440.00
USD
Quantity
Unit Price
1,000
$1.73
2,000
$1.72
3,000
$1.71
5,000+
$1.69
Product Variant Information section