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STMicroelectronics | STB8NM60T4

Manufacturer Part #

STB8NM60T4

N Channel 650 V 1 Ω 100 W 18 nC Surface Mount MDmesh™ Power MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB8NM60T4 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1Ω
Rated Power Dissipation: 100W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 8A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 23ns
Rise Time: 10ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 400pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,620.00
USD
Quantity
Unit Price
1,000
$2.62
2,000
$2.60
3,000+
$2.58
Product Variant Information section