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STMicroelectronics | STD2N62K3

Manufacturer Part #

STD2N62K3

N-Channel 620 V 3.6 Ω Surface Mount SuperMesh III Power MosFet - TO-252-3

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Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STD2N62K3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 620V
Drain-Source On Resistance-Max: 3.6Ω
Rated Power Dissipation: 45|W
Qg Gate Charge: 15nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STD2N62K3 is a N-channel SuperMESH3™ Power MOSFET. These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

Features:

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,775.00
USD
Quantity
Unit Price
2,500
$0.71
5,000
$0.70
7,500
$0.695
10,000+
$0.69
Product Variant Information section