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Manufacturer Part #

STW10N95K5

Single N-Channel 950 V 130 W 22 nC Silicon Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW10N95K5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 950V
Drain-Source On Resistance-Max: 0.8Ω
Rated Power Dissipation: 130W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 8A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 51ns
Rise Time: 14ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 20.15mm
Length: 15.75mm
Input Capacitance: 630pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$1,512.00
USD
Quantity
Unit Price
30
$2.59
120
$2.55
450
$2.52
900
$2.50
2,250+
$2.45
Product Variant Information section