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Manufacturer Part #
M48Z58-70PC1
M48Z58 Series 64 Kb (8 K x 8) 5.5 V 70 ns Zeropower® SRAM - PCDIP-28
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:240 per Tube Package Style:PCDIP-28 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2520 | ||||||||||
STMicroelectronics M48Z58-70PC1 - Product Specification
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STMicroelectronics M48Z58-70PC1 - Technical Attributes
| Memory Density: | 64kb |
| Memory Organization: | 8K x 8 |
| Supply Voltage-Nom: | 4.75V to 5.5V |
| Access Time-Max: | 70ns |
| Interface: | Parallel |
| Power Dissipation: | 1W |
| Temperature Grade: | Commercial |
| Operating Temp Range: | 0°C to 70°C |
| Storage Temperature Range: | -40°C to +85°C |
| Moisture Sensitivity Level: | 1 |
| Package Style: | PCDIP-28 |
| Mounting Method: | Through Hole |
Features & Applications
The M48Z58-70PC1 is a part of M48Z series Battery Backed SRAM.It has an operating temperature ranging from -40 °C to +85 °C and it comes in PCDIP-28 Packaging.
The M48Z58 ZEROPOWER® RAM is an 8K x 8 non-volatile static RAM that integrates power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery backed-up memory solution.
Features:
- Integrated, ultra low power SRAM, power-fail control circuit, and battery
- READ cycle time equals WRITE cycle time
- Automatic power-fail chip deselect and WRITE protection
- WRITE protect voltages: (VPFD = Power-fail deselect voltage)
- M48Z58: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V
- Self-contained battery in the CAPHAT™ DIP package
- Packaging includes a 28-lead SOIC and SNAPHAT® top (to be ordered separately)
- SOIC package provides direct connection for a SNAPHAT® top which contains the battery
- Pin and function compatible with JEDEC standard 8 Kbit x 8 SRAMs
- RoHS compliant
- Lead-free second level interconnect
Available Packaging
Package Qty:
240 per Tube
Package Style:
PCDIP-28
Mounting Method:
Through Hole