Microchip | SST39VF3201-70-4C-B3KE

CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This device writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

Featuring high performance Word-Program, provides a typical Word-Program time of 7 µsec (microsecond).  To protect against inadvertent write, it has on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

This is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.

To meet high density, surface mount requirements, it is offered in 48-lead TSOP and 48-ball TFBGA packages

SST’s SST39VF3201-70-4C-B3KE is a 32Mb (2M x 16), Bottom Sector Protect, 70 nano second, 3 volt, 48 lead Thin Fine Pitch Ball Grid Array (TFBGA) in a Commercial Temperature specification.