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Manufacturer Part #

BFU725F/N1,115

BFU725 Series 2.8 V 18 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code: 2213
Product Specification Section
NXP BFU725F/N1,115 - Technical Attributes
Attributes Table
Polarity: NPN
CE Voltage-Max: 2.8V
Package Style:  SOT-343F-4
Mounting Method: Surface Mount
$Features & Applications

The BFU725F/N1 are NPN silicon germanium microwave transistor. NXP's wideband transistors offer a host of package, process and specifications options. The range is now up to its 7th generation, delivering operating frequencies from 100 MHz to 20 GHz. 

Features:

  • High gain
  • High transition frequency
  • Low noise

Applications:

  • Noise amplifiers for microwave communications systems
  • Digital cordless applications
Pricing Section
Global Stock:
9,000
USA:
9,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$615.00
USD
Quantity
Web Price
3,000
$0.205
6,000
$0.20
9,000
$0.198
12,000+
$0.195
Product Variant Information section