Manufacturer Part #
BFU725F/N1,115
BFU725 Series 2.8 V 18 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4
Product Specification Section
NXP BFU725F/N1,115 - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
NXP BFU725F/N1,115 - Technical Attributes
Attributes Table
Polarity: | NPN |
CE Voltage-Max: | 2.8V |
Package Style: | SOT-343F-4 |
Mounting Method: | Surface Mount |
Features & Applications
The BFU725F/N1 are NPN silicon germanium microwave transistor. NXP's wideband transistors offer a host of package, process and specifications options. The range is now up to its 7th generation, delivering operating frequencies from 100 MHz to 20 GHz.
Features:
- High gain
- High transition frequency
- Low noise
Applications:
- Noise amplifiers for microwave communications systems
- Digital cordless applications
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Lead Time:
30 Weeks
Quantity
Web Price
3,000
$0.182
6,000
$0.178
9,000
$0.176
12,000
$0.175
15,000+
$0.17
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-343F-4
Mounting Method:
Surface Mount