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Infineon | BSC093N15NS5ATMA1

Manufacturer Part #

BSC093N15NS5ATMA1

Single N-Channel 150 V 9.3 mOhm 33 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC093N15NS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 9.3mΩ
Rated Power Dissipation: 139W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 87A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 14.4ns
Rise Time: 4.3ns
Fall Time: 3.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 3230pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$7,750.00
USD
Quantity
Unit Price
5,000+
$1.55
Product Variant Information section