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Infineon Technologies | BSZ120P03NS3GATMA1

Manufacturer Part #

BSZ120P03NS3GATMA1

Single P-Channel 30 V 12 mOhm 30 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies BSZ120P03NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 11A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 23ns
Rise Time: 11ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Technology: OptiMOS
Input Capacitance: 2240pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,200.00
USD
Quantity
Unit Price
5,000
$0.64
10,000+
$0.63
Product Variant Information section