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Référence fabricant

FDC6306P

Dual P-Channel 20 V 0.170 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2507
Product Specification Section
onsemi FDC6306P - Caractéristiques techniques
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.17Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 4.2nC
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDC6306P is a Dual P-Channel 2.5 V Specified PowerTrench Mosfet in a SSOT-6 package .

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Product Features :

  • -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V, RDS(on) = 0.250 Ω @ VGS = -2.5 V
  • Low gate charge (2.3nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
  • Load switch
  • Battery protection
  • Power management

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :Order inventroy details
3 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
6000
Multiples de :
3000
Total 
1 230,00 $
USD
Quantité
Prix unitaire
3 000
$0.21
6 000
$0.205
30 000+
$0.20
Product Variant Information section