onsemi | FDC6306P

The FDC6306P is a Dual P-Channel 2.5 V Specified PowerTrench Mosfet in a SSOT-6 package .

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Product Features :

• -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V, RDS(on) = 0.250 Ω @ VGS = -2.5 V
• Low gate charge (2.3nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
• Load switch
• Battery protection
• Power management

Applications :

• AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
• External AC-DC Merchant Power Supply - Wireless Communications
• Wireless LAN Card & Broadband Access
• Medical Electronics/Devices