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Infineon Technologies | IPB017N06N3GATMA1

Manufacturer Part #

IPB017N06N3GATMA1

Single N-Channel 60 V 1.7 mOhm 206 nC OptiMOS™ Power Mosfet - D2PAK-7

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2433
Product Specification Section
Infineon Technologies IPB017N06N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.7mΩ
Rated Power Dissipation: 250|W
Qg Gate Charge: 206nC
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,110.00
USD
Quantity
Unit Price
1,000
$2.11
2,000
$2.09
3,000
$2.08
4,000+
$2.07
Product Variant Information section