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Infineon Technologies | IPB180N04S401ATMA1

Manufacturer Part #

IPB180N04S401ATMA1

Optimos Series 40V 180A 1.3mΩ N‑Channel 188W Power Mosfet TO‑263‑7

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2610
Product Specification Section
Infineon Technologies IPB180N04S401ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.3mΩ
Rated Power Dissipation: 188|W
Qg Gate Charge: 135nC
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,470.00
USD
Quantity
Unit Price
1,000
$1.47
2,000
$1.46
4,000
$1.45
5,000+
$1.44
Product Variant Information section