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Infineon Technologies | IPD60R360P7ATMA1

Manufacturer Part #

IPD60R360P7ATMA1

Single N-Channel 650 V 360 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK

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Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IPD60R360P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.36Ω
Rated Power Dissipation: 41W
Qg Gate Charge: 13C
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 42ns
Rise Time: 7ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 555pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2500
Multiple Of:
2500
Total
$3,300.00
USD
Quantity
Unit Price
2,500
$1.32
5,000+
$1.31
Product Variant Information section