text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPDD60R080G7XTMA1

Infineon | IPDD60R080G7XTMA1

Manufacturer Part #

IPDD60R080G7XTMA1

N-Channel 600 V 80 mOhm 42 nC CoolMOS™ G7 Power Transistor - HDSOP-10

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPDD60R080G7XTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 174W
Qg Gate Charge: 42nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 29A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 61ns
Rise Time: 5ns
Fall Time: 3.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 1640pF
Package Style:  HDSOP-10
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1700
Multiple Of:
1700
Total
$5,202.00
USD
Quantity
Unit Price
1,700+
$3.06
Product Variant Information section