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Infineon Technologies | IRF1018EPBF

Manufacturer Part #

IRF1018EPBF

Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2526
Product Specification Section
Infineon Technologies IRF1018EPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 8.4mΩ
Rated Power Dissipation: 110|W
Qg Gate Charge: 46nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
100
USA:
100
On Order:Order inventroy details
100
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$69.50
USD
Quantity
Unit Price
50
$1.39
200
$1.37
750
$1.35
1,500
$1.34
3,750+
$1.31
Product Variant Information section