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Infineon | IRF40R207

Manufacturer Part #

IRF40R207

Single N-Channel 40 V 5.1 mOhm 45 nC HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF40R207 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 5.1mΩ
Rated Power Dissipation: 83W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 90A
Turn-on Delay Time: 7.8ns
Turn-off Delay Time: 25ns
Rise Time: 35ns
Fall Time: 19ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 2110pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$610.00
USD
Quantity
Unit Price
2,000
$0.305
4,000
$0.30
8,000
$0.295
30,000+
$0.29
Product Variant Information section