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Infineon Technologies | IRF640NPBF

Manufacturer Part #

IRF640NPBF

Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3

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Mfr. Name: Infineon Technologies
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Product Variant Information section
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Product Specification Section
Infineon Technologies IRF640NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.15Ω
Rated Power Dissipation: 150W
Qg Gate Charge: 67nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 23ns
Rise Time: 19ns
Fall Time: 5.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 1160pF
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The IRF640NPBF is a Fifth Generation HEXFET® Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.  For more information, please see the datasheet.

The IRF640NPBF comes in a TO-220 package.  PBF indicates Leadfree.
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$930.00
USD
Quantity
Unit Price
40
$0.50
150
$0.485
500
$0.475
2,000
$0.465
7,500+
$0.445
Product Variant Information section