Référence fabricant
IRFB7734PBF
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Flange Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IRFB7734PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Detailed change informationSubject :Capacity extension for dedicated Gen12.7 products by introduction of an additional wafer manufacturing site at Infineon TechnologiesDresden, Germany.Reason:Extension of wafer manufacturing sites for additional capacity to ensure continuity of supply and flexible manufacturing.
Statut du produit:
Infineon IRFB7734PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 3.5mΩ |
| Rated Power Dissipation: | 290|W |
| Qg Gate Charge: | 180nC |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Flange Mount |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Flange Mount