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Infineon | IRFP4668PBF

Manufacturer Part #

IRFP4668PBF

Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2328
Product Specification Section
Infineon IRFP4668PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 9.7mΩ
Rated Power Dissipation: 520W
Qg Gate Charge: 161nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 130A
Turn-on Delay Time: 41ns
Turn-off Delay Time: 64ns
Rise Time: 105ns
Fall Time: 74ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Input Capacitance: 10720pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
3
USA:
3
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$2.38
USD
Quantity
Unit Price
1
$2.38
30
$2.34
125
$2.30
400
$2.27
1,500+
$2.21
Product Variant Information section