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Manufacturer Part #
IRFR9024NTRPBF
Single P-Channel 55V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Package Style:TO-252AA Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Infineon IRFR9024NTRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
- Updated information marked in BLUE TYPE- Original PCN N? 2023-092-A dated 2023-01-15 (new: 2024-01-15) Product identification Traceability is assured via Wafer lot number & country of diffusion Country of diffusion: ? United States = Infineon Technologies Temecula? Taiwan = EPISIL Technologies Inc.? Malaysia = Infineon Technologies Kulim
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFR9024NTRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfr9024ntrpbf-infineon-8976268
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFR9024NTRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfr9024ntrpbf-infineon-8976268
Infineon IRFR9024NTRPBF - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.175Ω |
| Rated Power Dissipation: | 38W |
| Qg Gate Charge: | 19nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 11A |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 23ns |
| Rise Time: | 55ns |
| Fall Time: | 37ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 350pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252AA
Mounting Method:
Surface Mount