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Manufacturer Part #

IRFU9024NPBF

Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-251

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2412
Product Specification Section
Infineon Technologies IRFU9024NPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.175Ω
Rated Power Dissipation: 38W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 23ns
Rise Time: 55ns
Fall Time: 37ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 6.22mm
Length: 6.73mm
Input Capacitance: 350pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
14
USA:
14
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
37 Weeks
Minimum Order:
14
Multiple Of:
1
Total
$14.14
USD
Quantity
Unit Price
25
$1.01
100
$0.98
300
$0.96
1,000
$0.935
3,000+
$0.895
Product Variant Information section