
Manufacturer Part #
IRFZ48NPBF
Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3
Product Specification Section
Infineon IRFZ48NPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Multiple Material Change
12/18/2023 Details and Download
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
Active
Active
Infineon IRFZ48NPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 14mΩ |
Rated Power Dissipation: | 130W |
Qg Gate Charge: | 81nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 64A |
Turn-on Delay Time: | 12ns |
Turn-off Delay Time: | 34ns |
Rise Time: | 78ns |
Fall Time: | 50ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 9.02mm |
Length: | 10.67mm |
Input Capacitance: | 1970pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Features & Applications
Pricing Section
Global Stock:
286
USA:
286
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Unit Price
1
$0.41
100
$0.395
300
$0.39
1,250
$0.38
4,000+
$0.36
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole