text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRL60HS118

Infineon | IRL60HS118

Manufacturer Part #

IRL60HS118

N-Channel 60 V 18.5 A 11.5 W Surface Mount OptiMOSTM5 Power Mosfet - PQFN-6

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRL60HS118 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 17mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 8.4ns
Turn-off Delay Time: 9ns
Rise Time: 21ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 660pF
Package Style:  PQFN-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,400.00
USD
Quantity
Unit Price
4,000
$0.35
8,000
$0.345
12,000
$0.34
20,000+
$0.335
Product Variant Information section