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Manufacturer Part #

IRLR024NTRPBF

Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2116
Product Specification Section
Infineon IRLR024NTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 45W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 17A
Turn-on Delay Time: 7.1ns
Turn-off Delay Time: 20ns
Rise Time: 74ns
Fall Time: 29ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 2.39mm
Length: 6.22mm
Input Capacitance: 480pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
94,000
Germany (Online Only):
94,000
168,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$720.00
USD
Quantity
Web Price
2,000
$0.36
4,000
$0.345
6,000
$0.325
8,000
$0.31
10,000+
$0.295