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ROHM | SCT3017ALGC11

Manufacturer Part #

SCT3017ALGC11

Single N-Channel 650 V 22.4 mOhm 172 nC 427 W SiC Mosfet - TO-247-3

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
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Product Specification Section
ROHM SCT3017ALGC11 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 118A
Input Capacitance: 2884pF
Power Dissipation: 427W
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
1
Multiple Of:
1
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Total
$80.41
USD
Quantity
Unit Price
1
$80.41
4
$79.33
15
$78.32
30
$77.79
75+
$76.58
Product Variant Information section