onsemi | H11F1M

The H11F1M consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector.

The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Features:

• As remote variable resistor
• ≤ 100Ω to ≥ 300MΩ
• ≥ 99.9% linearity
• ≤ 15pF shunt capacitant
• ≥ 100GΩ I/O isolation resistance
• As an analog switch
• Extremely low offset voltage
• 60Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff ≤ 15µS
• UL recognized (File #E90700)

Applications:

• As a remote variable  resistor:
  • Isolated variable attenuator
  • Automatic gain control
  • Active filter fine tuning/band switching
• As an analog switch:
  • Isolated sample and hold circuit
  • Multiplexed, optically isolated A/D conversion