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  4. Diodes Incorporated — DMTH10H1M7SPGWQ 100V +175°C N-Channel Enhancement Mode MOSFET

Diodes Incorporated — DMTH10H1M7SPGWQ 100V +175°C N-Channel Enhancement Mode MOSFET

Diodes Incorporated

 

Diodes Incorporated DMTH10H1M7SPGWQ 100V +175°C N-Channel MOSFET

High-temperature automotive MOSFET for efficient power conversion

The Diodes Incorporated DMTH10H1M7SPGWQ is a 100 V N-channel enhancement mode MOSFET designed for demanding automotive applications requiring high thermal robustness and efficiency. Rated for operation up to +175°C and qualified to AEC-Q101, it delivers reliable performance in harsh electrical and thermal environments.

With low RDS(on), fast switching capability, and optimized input capacitance, the device supports efficient power conversion in systems where performance and durability are critical.

Features

  • 100 V N-channel enhancement mode MOSFET
  • Operation rated up to +175°C for high ambient environments
  • AEC-Q101 qualified with PPAP support
  • 100% UIS (Unclamped Inductive Switching) tested in production

 

  • Low RDS(on) for reduced conduction losses
  • Fast switching performance
  • Low input capacitance for improved efficiency
  • Wettable flank package for improved optical inspection

Benefits

  • Improved system efficiency through reduced power losses
  • High reliability in automotive-grade environments
  • Enhanced thermal stability at elevated temperatures
  • Robust performance under inductive switching stress
  • Optimized for compact and high-density designs

Applications

  • Engine management systems
  • Body control electronics
  • DC-DC converters

 


Diodes Incorporated DMTH10H1M7SPGWQ N-Channel MOSFET