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  4. Infineon — FF2MR12W3M1HB11BPSA1 1200 V CoolSiC™ MOSFET Sixpack

Infineon — FF2MR12W3M1HB11BPSA1 1200 V CoolSiC™ MOSFET Sixpack

 

Infineon

 

Infineon FF2MR12W3M1HB11BPSA1 1200 V CoolSiC™ MOSFET Sixpack

Featuring enhanced trench technology in EasyPACK 1B packaging with PressFIT contact technology

Infineon’s EasyPACK™ 1B 1200 V / 55 mΩ sixpack CoolSiC™ MOSFET module features outstanding module efficiency enabling system cost advantages.

Summary of Features

  • Best in Class packages with 12mm height
  • Combination of leading edge WBG material and Easy module packages
  • Very low module stray inductance
  • Low and equal gate inductances
  • Very symmetrical internal chip layouts
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins

Benefits

  • Outstanding module efficiency which enables system cost advantages
  • System efficiency improvement for reduced cooling requirements
  • Enabling higher frequency to Increase power density
  • Best cost performance ratio with reduced system costs
  • Reduction of drift caused by dynamic components

Applications

  • Fast EV charging
  • Servo motor drive and control
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)