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Infineon — GL-T MIRRORBIT™ NOR Flash

Infineon

 

Infineon S29GL01GT/S29GL512T GL-T MIRRORBIT™ NOR Flash

High density and high performance under the highest range of temperature conditions

The Infineon GL-T family supports superior performance for XIP under a wide range of temperature conditions. Experience reliability for embedded applications from -40°C to +125°C thanks to the unique technology that separates the Infineon GL-T family from the rest.

These devices feature cutting-edge 45-nm MIRRORBIT™ charge-trapping technology with a range of densities from 512 Mb to 2 Gb, a fast page access time of 15 ns, and an initial access time that goes up to 100ns.

Features
  • High density range: 512 Mb to 2 Gb
  • High performance: 98.5 MBps read bandwidth
  • Leading-edge technology: 45-nm MIRRORBIT™ Charge Trapping Technology

Architecture features:

  • x8/x16 Data Bus
  • 32-Byte Page Read Buffer
  • 512-Byte Program Buffer
  • 128-Kbyte Uniform Sectors

High temperature ranges:

  • Industrial (-40˚C to +85˚C)
  • Industrial-Plus (-40˚C to +105˚C)
  • Extended (-40˚C to +125˚C)

Automotive support:

  • AEC-Q100 Qualification
  • PPAP Support
Applications
  • Automotive Instrument Cluster
  • Automotive Infotainment
  • Communication Equipment
  • Industrial Automation