Microchip Silicon Carbide (SiC) Devices and Power Modules
Reliability tested beyond the ordinary
Microchip SiC power devices deliver unrivaled avalanche and short-circuit ruggedness with solutions for every part of your design to streamline your SiC development from benchtop to production. Microchip unifies in-house die production with low-inductance power packaging and digital programmable gate drivers so that you can design the most efficient, compact and reliable end products.
Microchip’s wide range of SiC products support a variety of markets and applications. They feature higher SiC power density vs. silicon which enables smaller magnetics, transformers, filters and passives, resulting in a compact form factor.
SiC products by Microchip can be combined with other Microchip devices, including 8-, 16- and 32-bit microcontrollers, power management devices, analog sensors, touch and gesture controllers and wireless connectivity solutions, to create a total system and lower overall system costs.
Benefits of Microchip SiC Devices and Power Modules:
- Improved system efficiency with lower switching losses
- Higher power density for similar power topologies
- Higher operating temperature
- Reduced cooling needs, smaller filters and passives
- Higher switching frequency
- Ten times lower Failure In Time (FIT) rate for neutron susceptibility than comparable Insulated Gate Bipolar Transistors (IGBTs) at rated voltages
- Extremely low parasitic (stray) inductance at < 2.9 nH in SiC modules
Silicon Carbide (SiC) Semiconductors
Silicon Carbide (SiC) semiconductors are innovative, new options for improving system efficiency, supporting higher operating temperatures and reducing costs in your power electronic designs. They can be used in broad range of high-voltage, high-power applications in industrial, automotive, medical, aerospace, defense, and communication market segments. Our next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high-repetitive Unclamped Inductive Switching (UIS) capability and excellent gate oxide shielding and channel integrity for robust operation. Our SiC MOSFET and SiC SBD die can be paired for use in power modules with various topologies.