Renesas M1000 / M3000 Series Non-Volatile MRAM
Non-volatile MRAM products offer high-speed alternative to battery-backed SRAM
Renesas M3000 and M1000 series Magnetoresistive Random-Access Memory (MRAM) products extends its range of MRAM, offering non-volatile memory densities of 4Mbits, 8Mbits or 16Mbits.
Renesas fabricates its MRAM devices with a new, proprietary technology called perpendicular magnetic-tunnel-junction Spin-Transfer Torque (STT), achieving best-in-class non-volatile memory performance including long data retention and fast Read and Write speeds. The Renesas MRAM products have configurable single, dual or quad serial peripheral interfaces which can operate in single or double data-rate modes at up to 108MHz.
The M1000 / M3000 MRAM series offers various performance advantages over other non-volatile memory technologies such as Flash. These include high memory density, long endurance, and low-voltage operation.
It is ideal as a replacement for battery-backed SRAM: while SRAM also offers high Read and Write speeds, the non-volatile nature of MRAM means that it needs no dedicated battery power supply in case of system power failure. The elimination of the back-up battery in MRAM-based data logging systems saves not only the cost of the battery itself, but also the pain of replacement, implementation of power-management firmware, and space.
Ferroelectric RAM (FRAM) is also often considered as a replacement for battery-backed SRAM, and offers similar performance to MRAM. But Renesas' MRAM devices offer higher density and longer endurance than FRAM products.
The M3016 evaluation kit contains a 16Mbit MRAM, and features an Arduino host board and terminal emulator software which communicate with a PC via a USB interface. Test programs supplied with the kit enable the user to quickly evaluate the functionality of the MRAM device.
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