ON Semiconductor — SiC Schottky Diodes Feature Zero Recovery Current and High Thermal Performance

ON Semiconductor’s Silicon Carbide (SiC) Schottky diodes benefit from the superior characteristics of this wide bandgap material to provide better switching performance and higher reliability than comparable silicon devices.

These characteristics include zero reverse- and forward-recovery current, temperature-independent switching behavior and excellent thermal performance. Use of ON Semiconductor’s SiC diodes enables power-system designers to gain benefits including higher efficiency, faster switching, increased power density, reduced EMI and reduced system size and cost.

The diodes are rated for a maximum junction temperature of 175°C. They enable easy implementation of paralleled power circuits. They are also notable for their high surge-current capacitance.