The NTHL080N120SC1 from ON Semiconductor is a 1,200V N-channel MOSFET fabricated in the wide bandgap Silicon Carbide (SiC) material to give superior switching performance and higher reliability than equivalent silicon devices.
SiC transistors are notable for their very low reverse-recovery charge and on-resistance, characteristics which minimize both switching and conduction losses and produce very high conversion efficiency.
In the NTHL080N120SC1, maximum onresistance is rated at 110mΩ at a gate-source voltage of 20V and a drain current of 20A. Low total gate charge of 56nC also contributes to the device’s high efficiency.
The NTHL080N120SC1 can support highfrequency switching circuits: it features short rise and fall times of 6ns and 8ns, and short turn-on and turn-off delays of 6ns and 28ns.
This SiC MOSFET is ideal for use in power factor correction circuits, boost inverters and charger circuits. Easy to drive, its gate-source threshold voltage is just 2.5V.
1,200V NTHL080N120SC1: Maximum on-resistance is just 110mΩ