ON Semiconductor 1200V/1700V Silicon Carbide (SiC) Schottky Diodes
High-voltage SiC diodes feature superior switching capability and higher efficiency
Designers of high-voltage power systems can benefit from superior efficiency as well as faster switching with lower losses by adopting the latest Silicon Carbide (SiC) Schottky diodes from ON Semiconductor.
The ON Semiconductor range of diodes for high-voltage power designs includes multiple 1,200V-rated devices, as well as the 1,700V NDSH25170A, which has a 400mJ avalanche energy rating, and supports a maximum rectified forward current of 35A at a case temperature of <135°C. The NDSH25170A’s forward voltage is 2.32V at a forward current of 25A and a junction temperature of 175°C. It is supplied in a through-hole TO-247-2LD package.
The 1,200V and 1,700V SiC Schottky diodes provide excellent fast-switching performance and high efficiency in Power Factor Correction (PFC) circuits and boost converters.
The diodes' cutting-edge SiC technology provides substantially better operating characteristics than an equivalent silicon-based diode offers. The SiC diodes’ key features, such as zero reverse-recovery charge, low forward voltage and temperature-independent current stability result in superior switching operation with lower power losses, and support effortless paralleling of devices.
The reduction in power losses observed in ON Semiconductors’ high-voltage SiC diodes is due to the inherently low forward voltage as well as their zero reverse-recovery charge, giving improved efficiency in converter circuits. In addition, the faster reverse recovery of SiC diodes allows for higher switching speeds. This reduces the size of the system’s magnetics and other passive components, enabling engineers to realize designs which have higher power density, a smaller volume and lower total bill-of-materials cost.
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Overview of WBG and SiC Capabilities