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Infineon | IKFW90N65ES5XKSA1

Manufacturer Part #

IKFW90N65ES5XKSA1

650 V, 75 A IGBT with anti-parallel diode in TO-247 package

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IKFW90N65ES5XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 154W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 300A
Collector - Emitter Saturation Voltage: 1.42V
Turn-on Delay Time: 42ns
Turn-off Delay Time: 151ns
Qg Gate Charge: 165nC
Reverse Recovery Time-Max: 89ns
Leakage Current: 100nA
Input Capacitance: 4500pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$902.40
USD
Quantity
Unit Price
10
$3.87
30
$3.82
125
$3.76
300
$3.72
1,250+
$3.62
Product Variant Information section