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STMicroelectronics | STGP10NB60SD

Manufacturer Part #

STGP10NB60SD

16 A 600 V Low Drop IGBT with soft and Fast Recovery Diode - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STGP10NB60SD - Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 29A
Power Dissipation-Tot: 80W
Turn-on Delay Time: 0.7µs
Turn-off Delay Time: 1.2µs
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The STGP10NB60SD is a low drop Power MESH Insulated Gate Bipolar Transistor with soft and fast recovery diode. This featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

Features:

  • Low on-voltage drop (VCE(sat))
  • High current capability
  • Very soft ultra fast recovery antiparallel diode

Applications:

  • Light dimmer
  • Static relays
  • Motor drive
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
50
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Total
$995.00
USD
Quantity
Unit Price
50
$1.05
200
$1.03
750
$0.995
2,000
$0.975
5,000+
$0.945
Product Variant Information section