text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSC015NE2LS5IATMA1

Infineon | BSC015NE2LS5IATMA1

Manufacturer Part #

BSC015NE2LS5IATMA1

BSC015NE2LS5I: 25V 1.5mOhm 10.5 nC N-Channel OptiMOS™ Power Mosfet - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2245
Product Specification Section
Infineon BSC015NE2LS5IATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.5mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 33A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 19ns
Rise Time: 4ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 2000pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,475.00
USD
Quantity
Unit Price
5,000
$0.495
10,000
$0.49
15,000+
$0.485
Product Variant Information section