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Manufacturer Part #
BSC060P03NS3EGATMA1
Single P-Channel 30 V 6 mOhm 61 nC OptiMOS™ Power Mosfet - TDSON-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:5000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2350 | ||||||||||
Infineon BSC060P03NS3EGATMA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description:NO change on electrical, thermal parameters and reliability as proven via product qualification and characterization. NO change in existing datasheet parameters NO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specification
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=BSC060P03NS3EGATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/bsc060p03ns3egatma1-infineon-1183589
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=BSC060P03NS3EGATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/bsc060p03ns3egatma1-infineon-1183589
Infineon BSC060P03NS3EGATMA1 - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 6mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 61nC |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount