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Infineon | IMW120R090M1HXKSA1

Manufacturer Part #

IMW120R090M1HXKSA1

Single N-Channel 1200 V 26 A 115 W CoolSiC™ Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMW120R090M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 115W
Qg Gate Charge: 21nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 26A
Turn-on Delay Time: 5.2ns
Turn-off Delay Time: 11.5ns
Rise Time: 4ns
Fall Time: 12.6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 707pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$117.00
USD
Quantity
Unit Price
30
$3.90
120
$3.83
300
$3.79
750
$3.75
1,200+
$3.69
Product Variant Information section